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Bulletin I25188 rev. A 04/00
ST733C..L SERIES
INVERTER GRADE THYRISTORS Features
Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance
Hockey Puk Version
940A
Typical Applications
Inverters Choppers Induction heating All types of force-commutated converters
case style TO-200AC (B-PUK)
Major Ratings and Characteristics
Parameters
IT(AV) @ Ths IT(RMS) @ Ths ITSM @ 50Hz @ 60Hz It
2
ST733C..L
940 55 1900 25 20000 20950 2000 1820 400 to 800 10 to 20 - 40 to 125
Units
A C A C A A KA2s KA2s V s
C
@ 50Hz @ 60Hz
V DRM/V RRM tq range TJ
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ST733C..L Series
Bulletin I25188 rev. A 04/00
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code VDRM /VRRM , maximum repetitive peak voltage V
04 ST733C..L 08 800 900 400
VRSM , maximum non-repetitive peak voltage V
500
I DRM/I RRM max.
@ TJ = TJ max.
mA
75
Current Carrying Capability
Frequency
180 el
o
ITM 180oel 1900 1660 1070 370 50 VDRM 50 40 50 55 40 3580 3600 2900 1220 50 VDRM
ITM 100s 3100 3130 2450 980 50 55 6800 3750 2120 960 50 V DRM 40
ITM
Units
50Hz 400Hz 1000Hz 2500Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Heatsink temperature Equivalent values for RC circuit
2200 2050 1370 500 50
5920 3240 1780 770 50 55 V A/s C A
10 / 0.47F
10 / 0.47F
10 / 0.47F
On-state Conduction
Parameter
IT(AV) Max. average on-state current @ Heatsink temperature IT(RMS) Max. RMS on-state current ITSM Max. peak, one half cycle, non-repetitive surge current
ST733C..L
940 (350) 55 (85) 1900 20000 20950 16800 17600
Units
A C
Conditions
180 conduction, half sine wave double side (single side) cooled DC @ 25C heatsink temperature double side cooled t = 10ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = TJ max
A
t = 8.3ms t = 10ms t = 8.3ms t = 10ms t = 8.3ms
I 2t
Maximum I2t for fusing
2000 1820 1410 1290 KA2s
t = 10ms t = 8.3ms
I 2 t
Maximum I2t for fusing
20000
KA2 s
t = 0.1 to 10ms, no voltage reapplied
2
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ST733C..L Series
Bulletin I25188 rev. A 04/00
On-state Conduction
Parameter
V TM Max. peak on-state voltage voltage V T(TO)2 High level value of threshold voltage r
t1
ST733C..L Units
1.63 1.09 1.20 0.32 m 0.29 600 1000 mA V
Conditions
ITM= 1700A, T J = TJ max, tp = 10ms sine wave pulse (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. (16.7% x x IT(AV) < I < x IT(AV)), TJ = TJ max. (I > x IT(AV)), TJ = TJ max. T J = 25C, I T > 30A T J = 25C, VA = 12V, Ra = 6, I G = 1A
V T(TO)1 Low level value of threshold
Low level value of forward slope resistance
r t2 IH IL
High level value of forward slope resistance Maximum holding current Typical latching current
Switching
Parameter
di/dt Max. non-repetitive rate of rise of turned-on current t
d
ST733C..L Units
1000 1.5 Min 10 Max 20 s A/s
Conditions
TJ = TJ max, VDRM = rated VDRM, ITM = 2 x di/dt Gate pulse: 20V 20, 10s 0.5s rise time TJ= 25C, VDM = rated VDRM, ITM = 50A DC, tp= 1s Resistive load, Gate pulse: 10V, 5 source TJ = TJ max, ITM = 550A, commutating di/dt = -40A/s VR = 50V, tp = 500s, dv/dt: see table in device code
Typical delay time
t
q
Max. turn-off time
Blocking
Parameter
dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current
ST733C..L
500 75
Units
V/s mA
Conditions
TJ = TJ max. linear to 80% VDRM, higher value available on request T J = TJ max, rated V DRM/V RRM applied
Triggering
Parameter
PGM Maximum peak gate power
ST733C..L Units
60 10 10 20 V W A
Conditions
T J = TJ max., f = 50Hz, d% = 50 TJ = TJ max, tp 5ms
PG(AV) Maximum average gate power IGM +VGM -V GM IGT VGT IGD VGD Max. peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage Max. DC gate current required to trigger Max. DC gate voltage required to trigger Max. DC gate current not to trigger Max. DC gate voltage not to trigger
T J = TJ max, tp 5ms
5 200 3 20 0.25 mA T J = 25C, V A = 12V, Ra = 6 V mA V T J = TJ max, rated VDRM applied
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ST733C..L Series
Bulletin I25188 rev. A 04/00
Thermal and Mechanical Specification
Parameter
TJ T
stg
ST733C..L
-40 to 125 -40 to 150 0.073 0.031 0.011 0.005 14700 (1500)
Units
C
Conditions
Max. operating temperature range Max. storage temperature range
RthJ-hs Max. thermal resistance, junction to heatsink RthC-hs Max. thermal resistance, case to heatsink F Mounting force, 10%
DC operation single side cooled K/W DC operation double side cooled DC operation single side cooled DC operation double side cooled N (Kg) g See Outline Table
K/W
wt
Approximate weight Case style
255
TO - 200AC (B-PUK)
RthJ-hs Conduction
(The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side 0.009 0.011 0.014 0.020 0.036 0.009 0.011 0.014 0.021 0.036 0.006 0.011 0.015 0.021 0.036 0.006 0.011 0.015 0.022 0.036
Units
Conditions
K/W
TJ = TJ max.
Ordering Information Table
Device Code
ST
1 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk
73
2
3
3
C
4
08
5
L
6
H
7
K
8
1
9 10
5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) dv/dt - tq combinations available
50 DN DM DL DP DK 100 EN EM EL EP EK 200 -FM * FL * FP FK 400 --HL HP H
8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
dv/dt (V/s) 20 10 CN 12 CM t q(s) 15 CL 18 CP 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 20 CK
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: None = 500V/sec (Standard value) L = 1000V/sec (Special selection)
* Standard part number. All other types available only on request.
4
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ST733C..L Series
Bulletin I25188 rev. A 04/00
Outline Table
0.7 (0.03) MIN. 27 (1 . 06 ) M AX . 34 (1.34) DIA. MAX. TWO PLACES
PIN RECEPTACLE AMP. 60598-1
0.7 (0.03) MIN.
53 (2.09) DIA. MAX.
6.2 (0.24) MIN.
20 5 58 .5 (2.3 ) D I A. M A X . 4.7 (0.18)
Case Style TO-200AC (B-PUK)
36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN.
All dimensions in millimeters (inches) Quote between upper and lower pole pieces has to be considered after application of Mounting Force (see Thermal and Mechanical Specification)
M a xim u m A llo w a b le H e a tsin k T e m p e ra t ur e (C )
12 0 11 0 10 0 90 80 70 60 50 40 0 10 0 2 00 30
ST 7 3 3 C ..L Se rie s (Sin g le Sid e C o o le d ) R thJ- hs (D C ) = 0 .0 7 3 K / W
M a xim u m A llo w a b le H e a tsin k T e m p e ra tu r e ( C )
13 0
13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 0 2 00 30
S T7 3 3 C ..L S e rie s (S in g le Sid e C o o le d ) R th J-hs (D C ) = 0 .0 7 3 K /W
Co nd uctio n A ng le
C o ndu ctio n Pe rio d
60 90 120 180
60 90 120 40 0 180 800 DC 1 0 00
300
4 00
50 0
6 00
7 00
60 0
A v e ra g e O n -st a t e C u rre n t (A )
Fig. 1 - Current Ratings Characteristics
A v e ra g e O n - sta t e C u rre n t (A )
Fig. 2 - Current Ratings Characteristics
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ST733C..L Series
Bulletin I25188 rev. A 04/00
M a xim u m A llo w a ble H e at sin k T e m p e ra t u re (C ) M a xim u m A llo w a ble H e a t sin k T e m p e ra t u re (C ) 130 120 110 100 90 80 70 60 50 40 30 20 0 2 00 4 00 60 0 8 00 1 0 00 12 0 0 1 40 0 A v e ra g e O n - sta t e C u rre n t (A )
Fig. 3 - Current Ratings Characteristics
C o nduc tio n An g le
ST 7 3 3 C ..L Se rie s (D o ub le Sid e C o o le d ) R thJ-h s (D C ) = 0 .0 3 1 K / W
13 0 12 0 11 0 10 0 90 80 70 60 50 40 30 20 0 50 0 10 0 0 15 00 3 0 60 90 1 20 1 80 DC 2 0 00
C on duc tio n Pe rio d
ST 7 3 3 C ..L S e rie s (D o u b le S id e C o o le d ) R thJ-hs (D C ) = 0 .0 3 1 K / W
3 0
60
90
120
180
A v e ra ge O n - sta t e C u rre n t (A )
Fig. 4 - Current Ratings Characteristics
Maxim um Average O n-state Power Loss (W )
2000
180 120 90 60 30
M a x im u m A v e ra g e O n -st a t e P o w e r Lo ss (W )
2500
2 5 00 180 120 90 60 30
RMS Lim it
2 0 00
R M S Lim it
1500
1 5 00
1000
C o ndu ctio n A ng le
1 0 00
C o nd uc tio n Ang le
500
ST733C..L Series TJ = 125C 0 200 400 600 800 1000 1200 1400
50 0
ST 7 3 3 C ..L Se rie s T J = 1 2 5 C 0 20 0 4 00 6 00 8 0 0 1 0 00 1 20 0 1 4 00
0 Average O n-state Curren t (A)
Fig. 5 - On-state Power Loss Characteristics
0 A v e ra g e O n - sta t e C u rre n t (A )
Fig. 6 - On-state Power Loss Characteristics
P e a k H a lf S ine W av e O n -st a t e C u rre n t (A )
P e a k H a lf Sin e W a v e O n -st a t e C u rre n t ( A )
1 80 00
A t A ny R at e d L o a d C o n dit io n A nd W ith Ra te d V RRM A p plie d Fo llo w ing S urg e .
20 0 0 0 18 0 0 0 16 0 0 0 14 0 0 0 12 0 0 0 10 0 0 0
1 60 00
In it ia l T J = 1 2 5 C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s
1 40 00
M a xim u m N o n R e pe titive Su r ge C u rre n t V e rsu s P ulse T rain D ur atio n . C o n tro l O f C o nd uc tio n M a y N o t Be M a int aine d. In itial T J = 1 25 C N o V o lt ag e R e a pplie d R a te d V R RM R e a pplie d
1 20 00
1 00 00 ST 7 3 3 C ..L S e r ie s 8 00 0 1 10 1 00
Nu m be r O f Eq ual A m plitu de Ha lf Cy c le C urre nt Pulse s (N )
ST 7 3 3 C ..L S e r ie s 8 00 0 0 .0 1 0. 1 P u lse T r a in D u ra t io n (s)
Fig. 8 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
1
Fig. 7 - Maximum Non-repetitive Surge Current Single and Double Side Cooled
6
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ST733C..L Series
Bulletin I25188 rev. A 04/00
( K/ W )
10000 In stan taneous O n-state Current (A)
0 .1 ST 7 3 3 C ..L S e r ie s
T ra ns ie n t Th e rm a l Im p e d a n c e Z
th J-hs
1000
T J = 25C TJ = 125C
0 .0 1
St e a d y S ta t e V a lu e R t hJ- hs = 0 .0 7 3 K / W (S in g le S id e C o o le d ) R t hJ- hs = 0 .0 3 1 K / W (D o u b le S id e C o o le d ) (D C O p e ra t io n )
ST733C..L Series
100 0.5
1
1. 5
2
2.5
3
3.5
4
4.5
0 .0 0 1 0 .0 0 1
0 .0 1
0 .1
1
10
10 0
In stan taneous On -state Voltage (V )
Fig. 9 - On-state Voltage Drop Characteristics
S q u a re W a v e P u lse D ur at io n ( s)
Fig. 10 - Thermal Impedance Z thJCCharacteristic
M a xim u m R e v e rse R e c o v e ry C h a rg e - Q rr ( C )
40 0 35 0 30 0 25 0 20 0 15 0 10 0 50 0 10
ST 7 3 3 C ..L Se rie s TJ = 12 5 C
I TM = 15 00 A
M a x im u m R e v e rse R e c o v e ry C u rre n t - Irr (A )
45 0
2 50
I TM = 1 50 0 A
2 00
10 0 0 A
1 00 0 A
1 50
5 00 A
5 00 A
1 00
50
S T 7 3 3 C ..L Se rie s T J = 1 2 5 C
0 10 20 30 40 50 60 70 80 9 0 10 0 R a te O f Fa ll O f F o rw a rd C u r re n t - d i/ d t (A / s)
Fig. 12 - Reverse Recovery Current Characteristics
20
30
40
50
60
70
80
90 1 0 0
R a t e O f Fa ll O f O n -st a t e C u rre n t - d i/ d t (A / s)
Fig. 11 - Reverse Recovered Charge Characteristics
1 E5
P e a k O n -sta t e C u rre n t (A )
Snub ber c ircu it R s = 10 ohm s C s = 0 .47 F V D = 8 0% V D R M
Snu bbe r circ uit R s = 1 0 o hm s C s = 0.4 7 F V D = 80% V D R M
1 E4
4 00 1 00 0 15 0 0 1 5 00 2 5 00 ST73 3C ..L Se rie s Sin uso idal pulse T C = 40C 3 0 00 5 00 0 tp ST7 33 C.. L Serie s Sinuso idal pulse TC = 55 C 20 0 10 0 50 Hz 4 00 1 00 0 20 0 1 00 5 0 Hz
1 E3
5 0 00
25 0 0 3 0 00 tp
1 E2 1 E1
1 E2
1 E3
1 E14E 41 E 1 1E1
1 E2
1E3
1E4
P u lse Ba se w id t h ( s)
Fig. 13 - Frequency Characteristics
Pu lse B a se w id th ( s)
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ST733C..L Series
Bulletin I25188 rev. A 04/00
1E 5 S nubbe r circuit R s = 10 o hms C s = 0 .4 7 F V D = 8 0% V DR M 1E 4 S T 733C..L S eries T rape zoidal puls e T C = 4 0C di/ dt = 5 0A/ s S nubber circuit R s = 10 ohms C s = 0.47 F V D = 80% V DR M S T 7 33C..L S eries T rapezoidal puls e T C = 55 C di/ dt = 50 A/s
tp
100 0 5 00 1E 3 1 500 2 000 25 00 30 00 50 00 1E 2 1E 1
40 0 20 0 10 0
50 H z 1 000 150 0 200 0 250 0 30 00 5 00
10 0 40 0 20 0
50 H z
1E 2
1E 3
1E1E 41E 1 1 4 1E
1E 2
1E 3
1E 4
P uls e B as e width (s )
P uls e B as ewidth (s )
Fig. 14 - Frequency Characteristics
1E 5 S nubbe r circuit R s = 10 o hms C s = 0 .4 7 F V D = 8 0% V D R M 1E 4 50 H z 5 00 100 0 150 0 2000 25 00 3 000 1E1E 41E 1 4 1E1 S T 733C..L S eries T rape zoidal puls e T C = 4 0C di/ dt = 1 00A/s S nubber circuit R s = 10 ohms C s = 0.47 F V D = 80% V DR M S T 7 33C..L S eries T rapezoidal puls e T C = 55 C di/ dt = 10 0A/s
tp
500 1E 3 2 500 3 000 500 0 1E 2 1E 1 1E 2 1000 15 00 2 000
400
2 00 1 00
100 50 H z 40 0 20 0
1E 3
1E 2
1E 3
1E 4
P uls e B as ewidth (s )
P uls e B as ewidth (s )
Fig. 15 - Frequency Characteristics
1 E5
ST7 33C ..L Serie s Sinusoidal pulse ST73 3C ..L Serie s Re ct ang ular pulse d i/dt = 50 A/s 20 jo ule s p er pu lse 5 3 2 1 0. 5 0. 4 0.3 10
Pe a k O n -st at e C u rre n t (A )
tp
tp 2 0 jo ule s pe r pulse 3 5 10
1 E4
2
1 E3
0.5 0 .4
1
1 E2
0 .3
1 E1 1 E1
1 E2
1E 3
1 E14E 41 E 1 1 1E
1E 2
1E 3
1 E4
P u lse B ase w id th (s)
P u lse B ase w id th (s)
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
8
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ST733C..L Series
Bulletin I25188 rev. A 04/00
100 R ectangular gate puls e a) R ecommende d load line for rated di/dt : 20 V, 10 ohms ; tr<=1 s b) R e commended load line for <=3 0% rated di/dt : 10V, 10ohms tr<=1 s 10 (b) (1) P GM = 10W , tp = 20ms (2) P GM = 20W , tp = 10ms (3) P GM = 40W , tp = 5ms (4) P GM = 60W , tp = 3.3ms (a)
1 (1) V GD IGD D ev ice: S T 7 33C..L S eries 0.1 0.00 1 0.01 0.1 1 F re quency L imited by P G(AV ) 10 100 (2) (3) (4)
Ins tantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
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